2SB1236 transistors power transistor ( ? 120v, ? 1.5a) 2SB1236 ! features 1) high breakdown voltage. (bv ceo = ? 120v) 2) low collector output capacitance. (typ. 30pf at v cb = ? 10v) 3) high transition frequency. (f t = 50mhz) 4) complements the 2sd1857. ! ! ! ! absolute maximum ratings (ta=25 c) parameter symbol v cbo v ceo v ebo i c p c tj tstg limits ? 120 ? 120 ? 5 ? 1.5 1 150 ? 55~+150 unit v v v a (dc) ? 3 * 2 * 1 a (pulse) w c c collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature * 1 single pulse pw = 100ms * 2 printed circuit board 1.7mm thick, collector plating 1cm 2 or larger. ! ! ! ! packaging specifications and h fe type 2SB1236 atv qr tv2 2500 package h fe code basic ordering unit (pieces) ! ! ! ! external dimensions (units : mm) rohm : atv 0.45 (2) collector 1.05 (3) base taping specifications (1) emitter 0.5 ( 1 ) 0.65max. 2.54 ( 2 ) 2.54 ( 3 ) 6.8 1.0 14.5 0.9 4.4 2.5 ! ! ! ! electrical characteristics (ta = 25 c) parameter symbol min. typ. max. unit conditions bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) f t cob ? 120 ? 120 ? 5 ? ? ? ? ? ? ? ? ? ? ? 50 30 ? ? ? ? 1 ? 1 ? 2 ? ? v v v a a v mhz pf i c = ? 50 a i c v = ? 1ma i e = ? 50 a v cb = ? 100v v eb = ? 4v i c /i b = ? 1a/ ? 0.1a v be(sat) ??? 1.5 v * * i c /i b = ? 1a/ ? 0.1a h fe 120 ? 390 ? v ce = ? 5v , i c = ? 0.1a v ce = ? 5v , i e = 0.1a , f = 30mhz v cb = ? 10v , i e = 0a , f = 1mhz collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance base-emitter saturation voltage * measured using pulse current.
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